GROWTH OF CRYSTALLINE SILICON FILMS ON POLYCRYSTALLINE SUBSTRATE

被引：9

作者：

ISHIWATARI, K

OKA, T

AKIYAMA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1967年 / 6卷 / 10期

关键词：

D O I：

10.1143/JJAP.6.1170

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1170 / +

页数：1

共 15 条

[1] GROWTH OF EPITAXIAL LAYERS OF SILICON BY SUBLIMATION THROUGH THIN ALLOY ZONES [J].

FILBY, JD ;

NIELSEN, S .

BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (01) :81-&

[2] PROGRESS TOWARD SINGLE CRYSTAL SILICON FILMS ON AMORPHOUS SUBSTRATES [J].

FILBY, JD ;

NIELSEN, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (09) :957-&

[3]

HALE AP, 1963, VACUUM, V13, P93

[4]

Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[5] SINGLE-CRYSTAL SILICON ON SAPPHIRE SUBSTRATE [J].

MANASEVIT, HM ;

SIMPSON, WI .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) :1349-&

[6] CRYSTAL GROWTH OF GAAS FROM GA BY A TRAVELING SOLVENT METHOD [J].

MLAVSKY, AI ;

WEINSTEIN, M .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) :2885-&

[7] GROWN-FILM SILICON TRANSISTORS ON SAPPHIRE [J].

MUELLER, CW ;

ROBINSON, PH .

PROCEEDINGS OF THE IEEE, 1964, 52 (12) :1487-&

[8]

NELSON H, 1963, RCA REV, V24, P603

[9]

RASMANIS E, 1963, INTERIM TECHNICAL DO

[10]

TARUI H, 1966, B ELEC TECH LAB JAPA, V30, P109

← 1 2 →