CONTROLLED MODIFICATION OF HETEROJUNCTION BAND LINEUPS BY DIFFUSIVE INTRALAYERS

We explore the effects of ultrathin Au intralayers at the interfaces of the lattice-matched heterojunctions ZnSe-Ge and GaP-SL and compare them to earlier results with A1 intralayers. Au intralayers do not chemically react with the semiconductors and diffuse strongly into both sides of the junction, whereas Al intralayers react and remain localized to the interface. Not only do the intralayer metals diffuse differently, but they cause the semiconductor components to interdiffuse differently. Comparison gives insight concerning interface-localized effects on the valence band discontinuity. © 1990, American Vacuum Society. All rights reserved.