THEORETICAL CALCULATION FOR A ZNSE-GE(110) HETEROJUNCTION WITH AN ULTRATHIN INTRALAYER

被引：19

作者：

DURAN, JC

MUNOZ, A

FLORES, F

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.35.7721

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：7721 / 7724

页数：4

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共 24 条

[1] NEW MULTILAYER AND GRADED GAP OPTOELECTRONIC AND HIGH-SPEED DEVICES BY BAND-GAP ENGINEERING
CAPASSO, F
[J]. SURFACE SCIENCE, 1984, 142 (1-3) : 513 - 528
[2] ON THE FORMATION OF SEMICONDUCTOR INTERFACES
FLORES, F
TEJEDOR, C
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (02): : 145 - 175
[3] ENERGY BARRIERS AND INTERFACE STATES AT HETEROJUNCTIONS
FLORES, F
TEJEDOR, C
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (04): : 731 - 749
[4] EFFECTIVE TWO-DIMENSIONAL HAMILTONIAN AT SURFACES
GUINEA, F
TEJEDOR, C
FLORES, F
LOUIS, E
[J]. PHYSICAL REVIEW B, 1983, 28 (08) : 4397 - 4402
[5] SCHOTTKY-BARRIER FORMATION .1. ABRUPT METAL-SEMICONDUCTOR JUNCTIONS
GUINEA, F
SANCHEZDEHESA, J
FLORES, F
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (33): : 6499 - 6512
[6] NEW TIGHT-BINDING PARAMETERS FOR COVALENT SOLIDS OBTAINED USING LOUIE PERIPHERAL STATES
HARRISON, WA
[J]. PHYSICAL REVIEW B, 1981, 24 (10) : 5835 - 5843
[7] MICROSCOPIC STUDY OF SEMICONDUCTOR HETEROJUNCTIONS - PHOTOEMISSION MEASUREMENT OF THE VALANCE-BAND DISCONTINUITY AND OF THE POTENTIAL BARRIERS
KATNANI, AD
MARGARITONDO, G
[J]. PHYSICAL REVIEW B, 1983, 28 (04): : 1944 - 1956
[8] MICROSCOPIC EFFECTS AT GAAS/GE(100) MOLECULAR-BEAM-EPITAXY INTERFACES - SYNCHROTRON-RADIATION PHOTOEMISSION-STUDY
KATNANI, AD
CHIARADIA, P
SANG, HW
ZURCHER, P
BAUER, RS
[J]. PHYSICAL REVIEW B, 1985, 31 (04): : 2146 - 2156
[9] KATNANI AD, 1985, J VAC SCI TECHNOL B, V3, P123
[10] EPITAXIAL AL FILMS ON GAAS(100) SURFACES
LANDGREN, G
LUDEKE, R
SERRANO, C
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 60 (02) : 393 - 402