EPITAXIAL AL FILMS ON GAAS(100) SURFACES

被引：29

作者：

LANDGREN, G ^{[1
]}

LUDEKE, R ^{[1
]}

SERRANO, C ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 60卷 / 02期

关键词：

D O I：

10.1016/0022-0248(82)90117-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：393 / 402

页数：10

共 18 条

[1] ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES
BRILLSON, LJ
BRUCKER, CF
STOFFEL, NG
KATNANI, AD
MARGARITONDO, G
[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (13) : 838 - 841
[2] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES
BRILLSON, LJ
BACHRACH, RZ
BAUER, RS
MCMENAMIN, J
[J]. PHYSICAL REVIEW LETTERS, 1979, 42 (06) : 397 - 401
[3] SINGLE-CRYSTAL-ALUMINUM SCHOTTKY-BARRIER DIODES PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) ON GAAS
CHO, AY
DERNIER, PD
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3328 - 3332
[4] INTERPRETATION OF SCANNING HIGH-ENERGY ELECTRON-DIFFRACTION MEASUREMENTS WITH APPLICATION TO GAAS SURFACES
DOVE, DB
LUDEKE, R
CHANG, LL
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) : 1897 - 1899
[5] TEMPERATURE AND RECONSTRUCTION DEPENDENCE OF THE INITIAL AL GROWTH ON GAAS(001)
LANDGREN, G
SVENSSON, SP
ANDERSSON, TG
[J]. SURFACE SCIENCE, 1982, 122 (01) : 55 - 68
[6] AL-REACTIONS WITH GAAS (100) SURFACES
LANDGREN, G
LUDEKE, R
[J]. SOLID STATE COMMUNICATIONS, 1981, 37 (02) : 127 - 131
[7] MOLECULAR-BEAM EPITAXY OF ALTERNATING METAL-SEMICONDUCTOR FILMS
LUDEKE, R
CHANG, LL
ESAKI, L
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (04) : 201 - 203
[8] INTERFACE BEHAVIOR AND CRYSTALLOGRAPHIC RELATIONSHIPS OF ALUMINUM ON GAAS(100) SURFACES
LUDEKE, R
LANDGREN, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 667 - 673
[9] SURFACE RECONSTRUCTION ON A1(100) AND A1(110) SURFACES
LUDEKE, R
LANDGREN, G
[J]. PHYSICAL REVIEW LETTERS, 1981, 47 (12) : 875 - 878
[10] LUDEKE R, 1980, 8TH P INT VAC C CANN, P579

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