THEORETICAL CALCULATION FOR A ZNSE-GE(110) HETEROJUNCTION WITH AN ULTRATHIN INTRALAYER

被引：19

作者：

DURAN, JC

MUNOZ, A

FLORES, F

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.35.7721

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7721 / 7724

页数：4

共 24 条

[11] THEORY OF SEMICONDUCTOR HETEROJUNCTIONS - THE ROLE OF QUANTUM DIPOLES - COMMENT
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[12] Milnes A. G., 1972, HETEROJUNCTION METAL
[13] EARLY STAGES OF GAAS-GE(110) INTERFACE FORMATION
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[14] UNDERSTANDING AND CONTROLLING HETEROJUNCTION BAND DISCONTINUITIES
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[15] HETEROJUNCTION BAND DISCONTINUITY CONTROL BY ULTRATHIN INTRALAYERS
NILES, DW
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CAPOZI, M
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1092 - 1094
[16] EXPERIMENTAL-STUDY OF THE GAP-SI INTERFACE
PERFETTI, P
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[J]. PHYSICAL REVIEW B, 1984, 30 (08): : 4533 - 4539
[17] ELECTRONIC-STRUCTURE OF (100) SEMICONDUCTOR HETEROJUNCTIONS
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TEJEDOR, C
FLORES, F
[J]. SURFACE SCIENCE, 1986, 168 (1-3) : 553 - 557
[18] INITIAL-STAGES OF THE SCHOTTKY-BARRIER FORMATION FOR ABRUPT COVALENT INTERFACES
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VERGES, JA
FLORES, F
[J]. SURFACE SCIENCE, 1986, 168 (1-3) : 100 - 104
[19] TIGHT-BINDING CALCULATION OF THE BAND OFFSET AT THE GE-GAAS (110) INTERFACE USING A LOCAL CHARGE-NEUTRALITY CONDITION
PRIESTER, C
ALLAN, G
LANNOO, M
[J]. PHYSICAL REVIEW B, 1986, 33 (10) : 7386 - 7388
[20] SCHOTTKY-BARRIER FORMATION .2. ETCHED METAL-SEMICONDUCTOR JUNCTIONS
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FLORES, F
GUINEA, F
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (11): : 2039 - 2047

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