EXPERIMENTAL-STUDY OF THE GAP-SI INTERFACE

被引：50

作者：

PERFETTI, P

PATELLA, F

SETTE, F

QUARESIMA, C

CAPASSO, C

SAVOIA, A

MARGARITONDO, G

机构：

[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706

[2] IST NAZL FIS NUCL,LAB NAZL FRASCATI,GRP NAZL STRUTTURA MAT,FRASCATI,ITALY

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.30.4533

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4533 / 4539

页数：7

共 44 条

[1] PROPOSAL FOR A NEW APPROACH TO HETEROJUNCTION THEORY
ADAMS, MJ
NUSSBAUM, A
[J]. SOLID-STATE ELECTRONICS, 1979, 22 (09) : 783 - 791
[2] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS
ANDERSON, RL
[J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &
[3] SELF-CONSISTENT CALCULATION OF ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE
BARAFF, GA
APPELBAUM, JA
HAMANN, DR
[J]. PHYSICAL REVIEW LETTERS, 1977, 38 (05) : 237 - 240
[4] SURFACE PROCESSES CONTROLLING MBE HETEROJUNCTION FORMATION - GAAS(100)/GE INTERFACES
BAUER, RS
MIKKELSEN, JC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 491 - 497
[5] GE-GAAS(110) INTERFACE FORMATION
BAUER, RS
MCMENAMIN, JC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1444 - 1449
[6] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES
Brillson, L. J.
[J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326
[7] ELECTRONIC-STRUCTURE IN GAAS-GE THROUGH ANGLE-RESOLVED PHOTOEMISSION
DENLEY, D
MILLS, KA
PERFETTI, P
SHIRLEY, DA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1501 - 1503
[8] RELATION OF SCHOTTKY BARRIERS TO EMPTY SURFACE STATES ON 3-5 SEMICONDUCTORS
EASTMAN, DE
FREEOUF, JL
[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (26) : 1624 - 1627
[9] EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656
[10] FRENSLEY WR, 1977, PHYS REV B, V15, P2642