CHARACTERIZATION OF PSEUDOMORPHIC INGAAS CHANNEL MODULATION-DOPED FIELD-EFFECT-TRANSISTOR STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：9

作者：

KOPF, RF

KUO, JM

KOVALCHICK, J

PEARTON, SJ

JONES, ED

OURMAZD, A

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

[2] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 08期

关键词：

D O I：

10.1063/1.346239

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper compares Hall-effect measurements combined with rapid thermal annealing (RTA) and low-temperature photoluminescence (4-K PL) as characterization techniques for the optimization of the growth of pseudomorphic InGaAs channel modulation-doped field-effect-transistor structures. The Hall-effect measurements with the RTA were used to determine the optimized growth temperature. 4-K PL was used to determine the quality of the InGaAs quantum well and the In mole fraction.

引用

页码：4029 / 4034

页数：6

共 15 条

[1] VARIATION OF THE CRITICAL LAYER THICKNESS WITH IN CONTENT IN STRAINED INX GA1-XAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].