NOVEL CH4/H-2 METALORGANIC REACTIVE ION ETCHING OF HG1-XCDXTE

被引：24

作者：

SEMU, A

MONTELIUS, L

LEECH, P

JAMIESON, D

SILVERBERG, P

机构：

[1] TELECOM AUSTRALIA,RES LABS,CLAYTON,VIC 3168,AUSTRALIA

[2] UNIV MELBOURNE,SCH PHYS,MICROANALYT RES CTR,PARKVILLE,VIC 3052,AUSTRALIA

[3] VACUTEC AB,S-23234 ARLEV,SWEDEN

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 14期

关键词：

D O I：

10.1063/1.106418

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have for the first time shown that CH4/H2 metalorganic reactive ion etching (MORIE) of Hg1-xCdxTe is feasible for mesa-etching to dimensions less than 2-mu-m. Process parametric effects on etch rate, surface anisotropy, and surface stoichiometry were studied with particular emphasis on the methane to hydrogen MORIE process ratio as well as Hg1-xCdxTe alloy composition. A laser interferometric detection scheme was employed for in situ measurement of etch rates as well as for end-point detection. A self-induced etch-stop mechanism for certain etch-gas compositions is also demonstrated.

引用

页码：1752 / 1754

页数：3

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