LASER-ASSISTED PHOTOCHEMICAL ETCHING OF HG0.8CD0.2TE

被引：6

作者：

BIENSTOCK, RJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 01期

关键词：

D O I：

10.1063/1.100833

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：54 / 56

页数：3

共 12 条

[1] LASER ETCHING OF 0.4 MU-M STRUCTURES IN CDTE BY DYNAMIC LIGHT GUIDING [J].

ARNONE, C ;

ROTHSCHILD, M ;

EHRLICH, DJ .

APPLIED PHYSICS LETTERS, 1986, 48 (11) :736-738

[2] COMPOSITION-SELECTIVE PHOTOCHEMICAL ETCHING OF COMPOUND SEMICONDUCTORS [J].

ASHBY, CIH ;

BIEFELD, RM .

APPLIED PHYSICS LETTERS, 1985, 47 (01) :62-63

[3]

ASPNES DE, 1984, J VAC SCI TECHNOL A, V2, P1309, DOI 10.1116/1.572400

[4]

ASPNES DE, 1984, J VAC SCI TECHNOL A, V2, P1316

[5] BASIC MECHANISMS IN LASER ETCHING AND DEPOSITION [J].

HOULE, FA .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 41 (04) :315-330

[6] LOCALIZED LASER ETCHING OF COMPOUND SEMICONDUCTORS IN AQUEOUS-SOLUTION [J].

OSGOOD, RM ;

SANCHEZRUBIO, A ;

EHRLICH, DJ ;

DANEU, V .

APPLIED PHYSICS LETTERS, 1982, 40 (05) :391-393

[7] DEEP-ULTRAVIOLET INDUCED WET ETCHING OF GAAS [J].

PODLESNIK, DV ;

GILGEN, HH ;

OSGOOD, RM .

APPLIED PHYSICS LETTERS, 1984, 45 (05) :563-565

[8]

PODLESNIK DV, 1986, APPL PHYS LETT, V48, P498

[9] A MODEL FOR THE LASER-STIMULATED OXIDATION OF SILICON [J].

QUENON, P ;

WAUTELET, M ;

DUMONT, M .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) :3112-3114

[10]

Rothschild M., 1987, Journal of Materials Research, V2, P244, DOI 10.1557/JMR.1987.0244

← 1 2 →