BASIC MECHANISMS IN LASER ETCHING AND DEPOSITION

[1] ADAMS AE, 1984, SPRINGER SER CHEM PH, V39, P269

[2] TRANSIENT NONLINEAR LASER-HEATING AND DEPOSITION - A COMPARISON OF THEORY AND EXPERIMENT [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (05) : 1653 - 1657

[3] REAL-TIME MEASUREMENT OF DEPOSITION INITIATION AND RATE IN LASER CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 327 - 331

[4] PHOTOENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION OF ZNSE FILMS USING DIETHYLZINC AND DIMETHYLSELENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 802 - 805

[5] VISIBLE-LASER PHOTODEPOSITION OF CHROMIUM-OXIDE FILMS AND SINGLE-CRYSTALS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (15) : 1018 - 1020

[6] LASER ETCHING OF 0.4 MU-M STRUCTURES IN CDTE BY DYNAMIC LIGHT GUIDING [J]. APPLIED PHYSICS LETTERS, 1986, 48 (11) : 736 - 738

[7] ASHBY CIH, 1984, APPL PHYS LETT, V45, P892, DOI 10.1063/1.95404

[8] DOPING LEVEL SELECTIVE PHOTOCHEMICAL DRY ETCHING OF GAAS [J]. APPLIED PHYSICS LETTERS, 1985, 46 (08) : 752 - 754

[9] COMPOSITION-SELECTIVE PHOTOCHEMICAL ETCHING OF COMPOUND SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (01) : 62 - 63

[10] INFLUENCE OF CW LASER SCAN SPEED IN SOLID-PHASE CRYSTALLIZATION OF AMORPHOUS SI FILM ON SI3N4-GLASS SUBSTRATE [J]. APPLIED PHYSICS LETTERS, 1981, 38 (08) : 613 - 615

[1] ADAMS AE, 1984, SPRINGER SER CHEM PH, V39, P269

[2] TRANSIENT NONLINEAR LASER-HEATING AND DEPOSITION - A COMPARISON OF THEORY AND EXPERIMENT [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (05) : 1653 - 1657

[3] REAL-TIME MEASUREMENT OF DEPOSITION INITIATION AND RATE IN LASER CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 327 - 331

[4] PHOTOENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION OF ZNSE FILMS USING DIETHYLZINC AND DIMETHYLSELENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 802 - 805

[5] VISIBLE-LASER PHOTODEPOSITION OF CHROMIUM-OXIDE FILMS AND SINGLE-CRYSTALS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (15) : 1018 - 1020

[6] LASER ETCHING OF 0.4 MU-M STRUCTURES IN CDTE BY DYNAMIC LIGHT GUIDING [J]. APPLIED PHYSICS LETTERS, 1986, 48 (11) : 736 - 738

[7] ASHBY CIH, 1984, APPL PHYS LETT, V45, P892, DOI 10.1063/1.95404

[8] DOPING LEVEL SELECTIVE PHOTOCHEMICAL DRY ETCHING OF GAAS [J]. APPLIED PHYSICS LETTERS, 1985, 46 (08) : 752 - 754

[9] COMPOSITION-SELECTIVE PHOTOCHEMICAL ETCHING OF COMPOUND SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (01) : 62 - 63

[10] INFLUENCE OF CW LASER SCAN SPEED IN SOLID-PHASE CRYSTALLIZATION OF AMORPHOUS SI FILM ON SI3N4-GLASS SUBSTRATE [J]. APPLIED PHYSICS LETTERS, 1981, 38 (08) : 613 - 615