BASIC MECHANISMS IN LASER ETCHING AND DEPOSITION

[71] PHOTOCHEMICAL GENERATION AND DEPOSITION OF COPPER FROM A GAS-PHASE PRECURSOR [J]. APPLIED PHYSICS LETTERS, 1985, 46 (01) : 97 - 99

[72] GROWTH OF EPITAXIAL FE ON GAAS BY METALORGANIC CVD [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 551 - 553

[73] KITAI A, 1983, MATER RES SOC S P, V17, P141

[74] EMISSION-SPECTRA, SURFACE QUALITY, AND MECHANISM OF EXCIMER LASER ETCHING OF POLYIMIDE FILMS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (12) : 1112 - 1114

[75] EXCIMER LASER ETCHING OF AL METAL-FILMS IN CHLORINE ENVIRONMENTS [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 1006 - 1008

[76] PHOTOCHEMICAL ETCHING DURING ULTRAVIOLET PHOTOLYTIC DEPOSITION OF METAL-FILMS ON SEMICONDUCTOR SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) : 287 - 289

[77] PHOTOCHEMICAL DEPOSITION OF SN FOR USE IN MOLECULAR-BEAM EPITAXY OF GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05): : 1534 - 1538

[78] SELECTIVE PHOTOETCHING OF GALLIUM-ARSENIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) : 1063 - +

[79] LIN YS, 1985, J VAC SCI TECHNOL B, V3, P1441

[80] LOVE PJ, 1984, MATER RES SOC S P, V29, P101

[71] PHOTOCHEMICAL GENERATION AND DEPOSITION OF COPPER FROM A GAS-PHASE PRECURSOR [J]. APPLIED PHYSICS LETTERS, 1985, 46 (01) : 97 - 99

[72] GROWTH OF EPITAXIAL FE ON GAAS BY METALORGANIC CVD [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 551 - 553

[73] KITAI A, 1983, MATER RES SOC S P, V17, P141

[74] EMISSION-SPECTRA, SURFACE QUALITY, AND MECHANISM OF EXCIMER LASER ETCHING OF POLYIMIDE FILMS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (12) : 1112 - 1114

[75] EXCIMER LASER ETCHING OF AL METAL-FILMS IN CHLORINE ENVIRONMENTS [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 1006 - 1008

[76] PHOTOCHEMICAL ETCHING DURING ULTRAVIOLET PHOTOLYTIC DEPOSITION OF METAL-FILMS ON SEMICONDUCTOR SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) : 287 - 289

[77] PHOTOCHEMICAL DEPOSITION OF SN FOR USE IN MOLECULAR-BEAM EPITAXY OF GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05): : 1534 - 1538

[78] SELECTIVE PHOTOETCHING OF GALLIUM-ARSENIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) : 1063 - +

[79] LIN YS, 1985, J VAC SCI TECHNOL B, V3, P1441

[80] LOVE PJ, 1984, MATER RES SOC S P, V29, P101