PHOTOCHEMICAL DEPOSITION OF SN FOR USE IN MOLECULAR-BEAM EPITAXY OF GAAS

被引:8
作者
KOWALCZYK, SP
MILLER, DL
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 05期
关键词
D O I
10.1116/1.582980
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:1534 / 1538
页数:5
相关论文
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