FINE PATTERNING OF DIAMOND FILMS BY LASER-ASSISTED CHEMICAL ETCHING IN OXYGEN

被引：26

作者：

RALCHENKO, VG ^{[1
]}

KOROTUSHENKO, KG ^{[1
]}

SMOLIN, AA ^{[1
]}

LOUBNIN, EN ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI, INST PHYS CHEM, MOSCOW 117915, RUSSIA

来源：

关键词：

ETCHING; DIAMOND FILMS; OXIDATION BEHAVIOR; LASER IRRADIATION;

D O I：

10.1016/0925-9635(94)00247-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the use of low power (similar to 2 W) continuous wave Ar+ laser for etching (engraving) of diamond films via a laser-induced local oxidation (burning) reaction. Smooth fine-grained diamond films of about 10 mu m thickness have been grown on Mo and Si substrates in a d.c. are discharge using CH4/H-2 gas mixtures. The sharply focused laser beam was scanned under computer control over the film surface causing fast diamond oxidation in air or pure O-2 atmosphere. The dependence of etch rate on laser power, beam scanning velocity and aim quality was examined. Various grooves and holes of a few micrometres in size have been produced with etch rate of tens of micrometres per second.

引用

页码：893 / 896

页数：4

共 13 条

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