THERMAL-STRESS DISTRIBUTIONS IN GAAS ON SAWTOOTH-PATTERNED SI SUBSTRATES - A FINITE-ELEMENT APPROACH

被引：6

作者：

LINGUNIS, EH ^{[1
]}

HAEGEL, NM ^{[1
]}

KARAM, NH ^{[1
]}

机构：

[1] SPIRE CORP,BEDFORD,MA 01730

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 18期

关键词：

D O I：

10.1063/1.108294

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermal stresses in GaAs on sawtooth-patterned Si substrates are studied by elastic finite element analysis under the assumption of plane strain. A comprehensive description of the highly nonuniform stress distribution is given and the possibility of band gap engineering by adjusting the geometrical characteristics of the structure is demonstrated. Results are presented in a form appropriate for interpretation of spectroscopic data and device engineering, and can be easily extended to other materials systems.

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页码：2202 / 2204

页数：3

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