PHOTOLUMINESCENCE STUDIES OF STRESS RELIEF IN SELECTIVELY GROWN GAAS ON SI BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：5

作者：

LINGUNIS, EH ^{[1
]}

HAEGEL, NM ^{[1
]}

KARAM, NH ^{[1
]}

机构：

[1] SPIRE CORP,BEDFORD,MA 01730

来源：

SOLID STATE COMMUNICATIONS | 1990年 / 76卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0038-1098(90)90842-Y

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The stress in GaAs grown selectively on Si by metalorganic chemical vapor deposition with two different nucleation techniques is studied by low temperature (4.2 K) photoluminescence. We demonstrate the effect of the SiO2 mask on the stress and show that the presence of polycrystalline GaAs on the SiO2 mask does not contribute significantly to the stress in the single crystals. Removal of the mask results in complete stress relief for features of size 10 × 10 μm2. © 1990.

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页码：303 / 306

页数：4

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