TENSILE-STRESS VARIATIONS OF CHEMICALLY ETCHED GAAS FILMS GROWN ON SI SUBSTRATES

被引：34

作者：

LEE, HP

LIU, XM

LIN, H

SMITH, JS

WANG, S

HUANG, YH

YU, P

HUANG, YZ

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DEPT PHYS & MAT,BERKELEY,CA 94720

[3] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV CHEM SCI,BERKELEY,CA 94720

[4] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV APPL SCI,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 24期

关键词：

D O I：

10.1063/1.100241

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2394 / 2396

页数：3

共 14 条

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