共 14 条
- [1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11): : L843 - L845
- [2] BRANTLEY WA, 1973, 11TH IEEE P ANN REL, P267
- [3] EFFECTS OF UNIAXIAL STRESS ON ELECTROREFLECTANCE SPECTRUM OF GE AND GAAS [J]. PHYSICAL REVIEW B, 1977, 15 (04): : 2127 - 2144
- [7] MILNES AG, 1987, MRS S P, V91
- [9] SELECTIVE PATTERNING OF SINGLE-CRYSTAL GAAS/GE STRUCTURES ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1985, 3 (03): : 883 - 886
- [10] STRESS VARIATIONS DUE TO MICROCRACKS IN GAAS GROWN ON SI [J]. APPLIED PHYSICS LETTERS, 1987, 51 (26) : 2236 - 2238