STRESS VARIATIONS DUE TO MICROCRACKS IN GAAS GROWN ON SI

被引：48

作者：

YACOBI, BG ^{[1
]}

ZEMON, S ^{[1
]}

NORRIS, P ^{[1
]}

JAGANNATH, C ^{[1
]}

SHELDON, P ^{[1
]}

机构：

[1] SOLAR ENERGY RES INST,GOLDEN,CO 80401

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 26期

关键词：

D O I：

10.1063/1.98951

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2236 / 2238

页数：3

共 15 条

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[3]

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[7]

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[8]

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[9] CHARACTERIZATION OF GAAS-LAYERS GROWN DIRECTLY ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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