ANALYSIS FOR DISLOCATION DENSITY REDUCTION IN SELECTIVE AREA GROWN GAAS FILMS ON SI SUBSTRATES

被引：64

作者：

YAMAGUCHI, M ^{[1
]}

TACHIKAWA, M ^{[1
]}

SUGO, M ^{[1
]}

KONDO, S ^{[1
]}

ITOH, Y ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, OPT ELECTR LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 01期

关键词：

D O I：

10.1063/1.102636

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality GaAs films with dislocation densities of less than 1×106 cm-2 on (100) Si substrates have been obtained by selective area growth using the metalorganic chemical vapor deposition method. Remarkable reduction of residual stress and dislocation density in the GaAs layers due to selective area growth have been analyzed using a simple model, in which the assumptions are that the generation of dislocations is caused by thermal stress in the films and dislocation density reduction in GaAs films on Si due to selective growth is caused by stress relief.

引用

页码：27 / 29

页数：3

共 13 条

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