OBSERVATION OF THERMALLY GENERATED CARRIER IN CHARGE COUPLED DEVICES

被引：7

作者：

BABA, T ^{[1
]}

SASAKI, R ^{[1
]}

机构：

[1] MATSUSHITA ELECT IND CO LTD, WIRELESS RES LAB, KADOMA, OSAKA, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷 / 08期

关键词：

D O I：

10.1143/JJAP.16.1369

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1369 / 1378

页数：10

共 15 条

[1] CHARGE COUPLED SEMICONDUCTOR DEVICES [J].

BOYLE, WS ;

SMITH, GE .

BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (04) :587-+

[2] TRANSVERSAL FILTERING USING CHARGE-TRANSFER DEVICES [J].

BUSS, DD ;

COLLINS, DR ;

BAILEY, WH ;

REEVES, CR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC 8 (02) :138-146

[3] EXACT MODELING OF TRANSIENT-RESPONSE OF AN MOS CAPACITOR [J].

COLLINS, TW ;

CHURCHILL, JN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (03) :90-101

[4]

Grove A S, 1967, PHYS TECHNOLOGY SEMI

[5] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR [J].

HEIMAN, FP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) :781-+

[6] TRANSIENT RESPONSES OF A PULSED MIS-CAPACITOR [J].

MULLER, J ;

SCHIEK, B .

SOLID-STATE ELECTRONICS, 1970, 13 (10) :1319-&

[7] THERMAL CARRIER GENERATION IN CHARGE-COUPLED-DEVICES [J].

ONG, DG ;

PIERRET, RF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (08) :593-602

[8] 8192-BIT BLOCK ADDRESSABLE CCD MEMORY [J].

ROSENBAUM, SD ;

CAVES, JT .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, 10 (05) :273-280

[9] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].

SAH, CT ;

NOYCE, RN ;

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243

[10] CURRENT AND CAPACITANCE TRANSIENT RESPONSES OF MOS CAPACITOR .1. GENERAL THEORY AND APPLICATIONS TO INITIALLY DEPLETED SURFACE WITHOUT SURFACE STATE [J].

SAH, CT ;

FU, HS .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 11 (01) :297-+

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