COUNTERDOPING OF MOS CHANNEL (CDC) - A NEW TECHNIQUE OF IMPROVING SUPPRESSION OF LATCHING IN INSULATED GATE BIPOLAR-TRANSISTORS

被引：5

作者：

CHOW, TP

BALIGA, BJ

PATTANAYAK, DN

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 01期

关键词：

D O I：

10.1109/55.20403

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：29 / 31

页数：3

共 10 条

[1] DIFFUSION OF INDIUM IN SILICON INERT AND OXIDIZING AMBIENTS [J].

ANTONIADIS, DA ;

MOSKOWITZ, I .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :9214-9216

[2]

Baliga B. J., 1982, International Electron Devices Meeting. Technical Digest, P264

[3] FAST-SWITCHING INSULATED GATE TRANSISTORS [J].

BALIGA, BJ .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (12) :452-454

[4]

BALIGA BJ, 1984, IEEE ELECTR DEVICE L, V5, P323, DOI 10.1109/EDL.1984.25932

[5] THE INSULATED GATE TRANSISTOR - A NEW 3-TERMINAL MOS-CONTROLLED BIPOLAR POWER DEVICE [J].

BALIGA, BJ ;

ADLER, MS ;

LOVE, RP ;

GRAY, PV ;

ZOMMER, ND .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) :821-828

[6]

Chang M. F., 1983, International Electron Devices Meeting 1983. Technical Digest, P83

[7] THE EFFECT OF CHANNEL LENGTH AND GATE OXIDE THICKNESS ON THE PERFORMANCE OF INSULATED GATE TRANSISTORS [J].

CHOW, TP ;

BALIGA, BJ ;

CHANG, MF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2554-2554

[8]

GHANDHI SK, 1983, VLSI FABRICATION PRI, P129

[9]

Goodman A. M., 1983, International Electron Devices Meeting 1983. Technical Digest, P79

[10] THE COMFET - A NEW HIGH CONDUCTANCE MOS-GATED DEVICE [J].

RUSSELL, JP ;

GOODMAN, AM ;

GOODMAN, LA ;

NEILSON, JM .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (03) :63-65

← 1 →