DC PERFORMANCE OF SHORT-CHANNEL ION-IMPLANTED GAAS-MESFETS (THE ROLE OF GATE LENGTH SHORTENING)

被引：8

作者：

KUZMIK, J

LALINSKY, T

MOZOLOVA, Z

PORGES, M

机构：

[1] Institute of Electrical Engineering, Slovak Academy of Sciences, 84239 Bratislava

来源：

SOLID-STATE ELECTRONICS | 1990年 / 33卷 / 10期

关键词：

E-Beam Lithography - Gate Length Shortening - Microwave Performance - Short-Channel MESFET'S;

D O I：

10.1016/0038-1101(90)90024-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To improve microwave performance of GaAs MESFETs, shortening of the gate length is most effective. Here the influence of gate length shortening on the d.c. performance of ion implanted GaAs MESFETs was investigated. MESFETs with various gate lengths patterned by direct e-beam lithography (down to 0.25 μm) were prepared. The presence of short-channel effects is discussed. © 1990.

引用

页码：1223 / 1227

页数：5

共 15 条

[1] SUB-100-NM GATE LENGTH GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS AND MODULATION-DOPED FIELD-EFFECT TRANSISTORS FABRICATED BY A COMBINATION OF MOLECULAR-BEAM EPITAXY AND ELECTRON-BEAM LITHOGRAPHY [J].