PERFORMANCE ANALYSIS OF SUBMICRON GATE GAAS-MESFETS

被引：15

作者：

ELSAYED, OL ^{[1
]}

ELGHAZALY, S ^{[1
]}

SALMER, G ^{[1
]}

LEFEBVRE, M ^{[1
]}

机构：

[1] UNIV LILLE 1, CTR HYPERFREQUENCES & SEMICOND, F-59655 VILLENEUVE DASCQ, FRANCE

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 06期

关键词：

SEMICONDUCTING GALLIUM ARSENIDE;

D O I：

10.1016/0038-1101(87)90224-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel 2-D numerical model incorporating nonstationary electron dynamics is used to investigate the complex transport phenomena governing the operation of sub-micron gate GaAs MESFET's. A theoretical analysis of different phenomena observed in subhalf micron devices is given. These include velocity overshoot, stationary and travelling domain formation, soft pinch off, excess drain current etc. The small signal parameters g//m, g//d and C//g//s and their dependence on bias condition are evaluated. The effects of physical quantities such as mobility and interface barrier on carrier injection and transport and consequently on device performance are presented.

引用

页码：643 / 654

页数：12

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