EXPERIMENTAL COMPARISONS IN THE ELECTRICAL PERFORMANCE OF LONG AND ULTRASHORT GATE LENGTH GAAS-MESFETS

被引：14

作者：

CHAO, PC ^{[1
]}

KU, WH ^{[1
]}

NULMAN, J ^{[1
]}

机构：

[1] NATL RES & RESOURCE FACIL SUBMICRON STRUCT, ITHACA, NY 14853 USA

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 08期

关键词：

D O I：

10.1109/EDL.1982.25546

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：187 / 190

页数：4

共 10 条

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[2]

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[7]

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[8]

TARUI Y, 1972, 4TH P C SOL STAT DEV, P78

[9] PHYSICAL BASIS OF SHORT-CHANNEL MESFET OPERATION [J].

WADA, T ;

FREY, J .

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[10] 2-DIMENSIONAL NUMERICAL-ANALYSIS OF STABILITY-CRITERIA OF GAAS FETS [J].

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