NONDESTRUCTIVE ION-IMPLANT MONITORING USING LASER RAMAN-SPECTROSCOPY

被引：5

作者：

DEWILTON, AC ^{[1
]}

SIMARDNORMANDIN, M ^{[1
]}

WONG, PTT ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,DIV CHEM,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

CANADIAN JOURNAL OF PHYSICS | 1987年 / 65卷 / 08期

关键词：

Boron - INTEGRATED CIRCUIT MANUFACTURE - Monitoring - INTEGRATED CIRCUITS; VLSI - Fabrication - SEMICONDUCTING SILICON - Ion Implantation - SPECTROSCOPY; RAMAN - Laser Applications;

D O I：

10.1139/p87-125

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A new Raman technique for monitoring low-dose ion implants is described. The capability for detection of implants of 20-50 keV B** plus (or equivalent BF** plus //2 energies) at doses as low as approximately 10**1**0 cm** minus **2 is of particular interest. The feasibility of using the technique for monitoring V//t-adjust implants is demonstrated. Low-energy B** plus and BF** plus //2 ion implants in silicon were studied to determine the detection limits of the technique. Samples were analyzed immediately after implantation, without annealing. Implant doses in the range from 3 multiplied by 10**1**6 cm** minus **2 to the detection limit of 3 multiplied by 10**1**0 cm** minus **2 were characterized in this way. The technique is intended for application to in situ process monitoring for VLSI technology.

引用

页码：821 / 830

页数：10

共 23 条

[1] RAMAN-SCATTERING AND PHOTOLUMINESCENCE IN BORON-DOPED AND ARSENIC-DOPED SILICON
CHERLOW, JM
AGGARWAL, RL
LAX, B
[J]. PHYSICAL REVIEW B, 1973, 7 (10): : 4547 - 4560
[2] CORDELLA PJ, 1985, APPL PHYS LETT, V46, P1076
[3] RAMAN-SPECTROSCOPY FOR NONDESTRUCTIVE DEPTH PROFILE STUDIES OF ION-IMPLANTATION IN SILICON
DEWILTON, AC
SIMARDNORMANDIN, M
WONG, PTT
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (05) : 988 - 993
[4] DEWILTON AC, 1986, P SPIE INT SOC OPT E, V623
[5] COMPARISON OF THE NEUTRON, RAMAN, AND INFRARED VIBRATIONAL-SPECTRA OF VITREOUS SIO2, GEO2, AND BEF2
GALEENER, FL
LEADBETTER, AJ
STRINGFELLOW, MW
[J]. PHYSICAL REVIEW B, 1983, 27 (02): : 1052 - 1078
[6] GONZALEZHERNAND.J, 1983, P SOC PHOTO-OPT INS, V452, P44
[7] OBSERVATION OF AMORPHOUS-SILICON REGIONS IN SILICON-RICH SILICON DIOXIDE FILMS
HARTSTEIN, A
TSANG, JC
DIMARIA, DJ
DONG, DW
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (10) : 836 - 837
[8] KEENAN WA, 1985, SOLID STATE TECHNOL, V28, P143
[9] RAMAN-SCATTERING STUDY OF RAPID THERMAL ANNEALING OF AS+-IMPLANTED SI
KIRILLOV, D
POWELL, RA
HODUL, DT
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) : 2174 - 2179
[10] KIRILLOV D, 1986, MRS S BOSTON

← 1 2 3 →