RAMAN-SCATTERING STUDY OF RAPID THERMAL ANNEALING OF AS+-IMPLANTED SI

被引：18

作者：

KIRILLOV, D

POWELL, RA

HODUL, DT

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 06期

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D O I：

10.1063/1.335983

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2174 / 2179

页数：6

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