THE INTERACTION OF OXYGEN WITH DISLOCATION CORES IN SILICON

被引：26

作者：

UMERSKI, A

JONES, R

机构：

[1] Department of Physics, University of Exeter, Exeter, EX4 4QL, Stocker Road

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1993年 / 67卷 / 04期

关键词：

D O I：

10.1080/01418619308213967

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The interaction of O with 90-degrees partial dislocations in Si is examined using a cluster method with local-density-functional pseudo-potential theory. We consider several states of O at dislocation cores firstly which are normally reconstructed and secondly which contain solitonic reconstructed bonding patterns. This topic has been the subject of a number of experiments by Sumino and his collaborators, and our overall findings support his conclusions.

引用

页码：905 / 915

页数：11

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