THE 90-DEGREES PARTIAL DISLOCATION IN SILICON - GEOMETRY AND ELECTRONIC-STRUCTURE

被引：20

作者：

LODGE, KW

LAPICCIRELLA, A

BATTISTONI, C

TOMASSINI, N

ALTMANN, SL

机构：

[1] UNIV LEICESTER,DEPT PHYS,LEICESTER LE1 7RH,ENGLAND

[2] CNR,IST TEORIA & STRUTTURA ELETTR,I-00016 MONTEROTONDO,ITALY

[3] CNR,IST METODOL AVANZATE INORGAN,I-00016 MONTEROTONDO,ITALY

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1989年 / 60卷 / 05期

关键词：

D O I：

10.1080/01418618908213885

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：643 / 651

页数：9

共 16 条

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