SYNTHESIS AND ANALYSIS OF BURIED SIC LAYERS IN MONOCRYSTALLINE SILICON

被引：8

作者：

DURUPT, P

CANUT, B

ROGER, JA

PIVOT, J

GAUTHIER, JP

机构：

[1] UNIV LYON 1,CNRS,DEPT PHYS MAT,F-69622 VILLEURBANNE,FRANCE

[2] UNIV LYON 1,CNRS,CRISTALLOG LAB,F-69622 VILLEURBANNE,FRANCE

来源：

THIN SOLID FILMS | 1982年 / 90卷 / 03期

关键词：

D O I：

10.1016/0040-6090(82)90394-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：353 / 357

页数：5

相关论文

共 9 条

[1] BARANOVA EK, 1971, DOKL AKAD NAUK SSSR+, V200, P869
[2] SOLUBILITY OF CARBON IN PULLED SILICON CRYSTALS
BEAN, AR
NEWMAN, RC
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (06) : 1211 - &
[3] DEARNALEY G., 1973, ION IMPLANTATION
[4] RBS, INFRARED AND DIFFRACTION COMPARED ANALYSIS OF SIC SYNTHESIS IN C-IMPLANTED SILICON
DURUPT, P
CANUT, B
GAUTHIER, JP
ROGER, JA
PIVOT, J
[J]. MATERIALS RESEARCH BULLETIN, 1980, 15 (11) : 1557 - 1565
[5] HEAVENS OS, 1964, PHYS THIN FILMS, V2, P193
[6] STRUCTURE AND ANNEALING PROPERTIES OF SILICON-CARBIDE THIN-LAYERS FORMED BY IMPLANTATION OF CARBON-IONS IN SILICON
KIMURA, T
KAGIYAMA, S
YUGO, S
[J]. THIN SOLID FILMS, 1981, 81 (04) : 319 - 327
[7] MEASUREMENT OF FILM THICKNESS FROM LATTICE ABSORPTION-BANDS
MOGAB, CJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (07) : 932 - 937
[8] OPTICAL-ABSORPTION AND ELECTRICAL-CONDUCTIVITY OF SIC FILMS PRODUCED BY ION-IMPLANTATION
ROTHEMUND, W
FRITZSCHE, CR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (04) : 586 - 588
[9] INFRARED PROPERTIES OF CUBIC SILICON CARBIDE FILMS
SPITZER, WG
KLEINMAN, DA
FROSCH, CJ
[J]. PHYSICAL REVIEW, 1959, 113 (01): : 133 - 136