OPTICAL-ABSORPTION AND ELECTRICAL-CONDUCTIVITY OF SIC FILMS PRODUCED BY ION-IMPLANTATION

被引：19

作者：

ROTHEMUND, W ^{[1
]}

FRITZSCHE, CR ^{[1
]}

机构：

[1] FRAUNHOFER GESELL, INST ANGEW FESTKORPERPHYS, D-78 FREIBURG, WEST GERMANY

来源：

关键词：

D O I：

10.1149/1.2401864

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：586 / 588

页数：3

共 12 条

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[3] SPUTTERING AND STRAIN OF SILICON BY ION IMPLANTATION
EERNISSE, EP
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) : 480 - &
[4] JOHNSON WS, 1969, PROJECTED RANGE STAT
[5] Knippenberg W.F., 1963, PHILIPS RES REP, V18, P161
[6] LELY JA, 1958, P INT COLLOQ SEMICON, P514
[7] LELY JA, 1958, P INT C SEMICONDUCTO, P525
[8] BETA-SILICON CARBIDE FILMS
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FORMIGONI, NP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (10) : 1440 - +
[9] SCHWUTTKE GH, 1972, AFCRL720176 AIR FORC
[10] INFRARED PROPERTIES OF HEXAGONAL SILICON CARBIDE
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[J]. PHYSICAL REVIEW, 1959, 113 (01): : 127 - 132