共 34 条
[1]
ANDERSSON TG, 1981, SURF SCI, V110, pL583, DOI 10.1016/0039-6028(81)90576-8
[4]
ATOMIC INTER-DIFFUSION AT AU-GAAS INTERFACES STUDIED WITH AL INTERLAYERS
[J].
PHYSICAL REVIEW B,
1981, 23 (12)
:6204-6215
[5]
DECONVOLUTION OF CONCENTRATION DEPTH PROFILES FROM ANGLE RESOLVED X-RAY PHOTOELECTRON-SPECTROSCOPY DATA
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1985, 3 (05)
:1973-1981
[6]
SILICIDE FORMATION AT THE TI/SI(111) INTERFACE - DIFFUSION PARAMETERS AND BEHAVIOR AT ELEVATED-TEMPERATURES
[J].
PHYSICAL REVIEW B,
1987, 35 (02)
:634-640
[7]
PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION
[J].
PHYSICAL REVIEW B,
1978, 18 (10)
:5545-5559
[8]
EQUILIBRIUM DIAGRAM OF SYSTEM GOLD-GALLIUM
[J].
JOURNAL OF THE LESS-COMMON METALS,
1966, 10 (01)
:42-&
[9]
METAL-ANION BOND STRENGTH AND ROOM-TEMPERATURE DIFFUSION AT METAL/GAAS INTERFACES - TRANSITION VERSUS RARE-EARTH VERSUS AU METAL OVERLAYERS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,
1986, 4 (03)
:965-968
[10]
Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700