1.54 MU-M WAVELENGTH EMISSION OF HIGHLY ER-DOPED CAF2 LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引:20
作者
DARAN, E [1 ]
LEGROS, R [1 ]
MUNOZYAGUE, A [1 ]
FONTAINE, C [1 ]
BAUSA, LE [1 ]
机构
[1] UNIV AUTONOMA MADRID,DEPT FIS MAT C-IV,E-28049 MADRID,SPAIN
关键词
D O I
10.1063/1.357140
中图分类号
O59 [应用物理学];
学科分类号
摘要
CaF2:Er layers have been grown by molecular-beam epitaxy on (100)-oriented CaF2 substrates; the Er concentration ranges from 1% to 50% (mole fraction). The 1.54 mum emission observed under excitation around 800 nm was studied by photoluminescence. Up to 35% Er concentration the integrated emission increases monotonously, quenching appearing for higher doping levels. Photoluminescence results are discussed within the framework of previous studies of Er3+ emission in the near-infrared range (830-860 nm) in order to gain insight into the Er centers involved in the 1.54 mum emission.
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页码:270 / 273
页数:4
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