OPTIMIZATION OF THE N+ LEDGE CHANNEL STRUCTURE FOR GAAS POWER FETS

被引：9

作者：

MACKSEY, HM

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 11期

关键词：

D O I：

10.1109/T-ED.1986.22747

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1818 / 1824

页数：7

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[3] FABRICATION OF N+ LEDGE CHANNEL STRUCTURE FOR GAAS-FETS WITH A SINGLE LITHOGRAPHY STEP
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