GAAS POWER FETS HAVING THE GATE RECESS NARROWER THAN THE GATE

被引：6

作者：

MACKSEY, HM

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 02期

关键词：

D O I：

10.1109/EDL.1986.26297

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：69 / 70

页数：2

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[1] ION-IMPLANTED GAAS X-BAND POWER FETS
DOERBECK, FH
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BREHM, GE
FRENSLEY, WR
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[2] POWER-LIMITING BREAKDOWN EFFECTS IN GAAS-MESFET
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[3] GAAS POWER MESFETS WITH A GRADED RECESS STRUCTURE
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[4] GAAS-FETS HAVING HIGH OUTPUT POWER PER UNIT GATE WIDTH
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[J]. ELECTRON DEVICE LETTERS, 1981, 2 (06): : 147 - 148
[5] FABRICATION OF N+ LEDGE CHANNEL STRUCTURE FOR GAAS-FETS WITH A SINGLE LITHOGRAPHY STEP
MACKSEY, HM
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[J]. ELECTRONICS LETTERS, 1985, 21 (21) : 955 - 957
[6] OPTIMIZATION OF GAAS POWER MESFET DEVICE AND MATERIAL PARAMETERS FOR 15-GHZ OPERATION
MACKSEY, HM
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VAIL, RC
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (02) : 467 - 471
[7] LOCALIZED GAAS ETCHING WITH ACIDIC HYDROGEN-PEROXIDE SOLUTIONS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (04) : 874 - 880