CONTAMINATION EFFECTS IN GLOW-DISCHARGE DEPOSITION SYSTEMS

被引：8

作者：

JANSEN, F

KUHMAN, D

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1988年 / 6卷 / 01期

关键词：

D O I：

10.1116/1.574997

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：13 / 18

页数：6

共 13 条

[1] AMORPHOUS-SEMICONDUCTOR SUPER-LATTICES [J].

ABELES, B ;

TIEDJE, T .

PHYSICAL REVIEW LETTERS, 1983, 51 (21) :2003-2006

[2] MECHANISMS OF PLASMA-ENHANCED SILICON-NITRIDE DEPOSITION USING SIH4-N2 MIXTURE [J].

DUN, H ;

PAN, P ;

WHITE, FR ;

DOUSE, RW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) :1555-1563

[3] PHYSICAL UNDERSTANDING OF GAS DESORPTION MECHANISMS [J].

HORIKOSHI, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :2501-2506

[4] PROPERTIES OF AMORPHOUS SEMICONDUCTING MULTILAYER FILMS [J].

KAKALIOS, J ;

FRITZSCHE, H ;

IBARAKI, N ;

OVSHINSKY, SR .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) :339-344

[5] CORRELATION OF PHOTOELECTRIC PROPERTIES OF A-SI-H IMAGE SENSOR WITH COMPOSITIONAL DISTRIBUTION OF SI3N4 BLOCKING INTERFACE [J].

KANEKO, S ;

OKUMURA, F ;

UCHIDA, H ;

KANAMORI, M ;

SAKAMOTO, M ;

ITANO, T ;

KAJIWARA, U ;

SAITO, T .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :1227-1230

[6] PREPARATION AND PROPERTIES OF AMORPHOUS-SILICON PRODUCED BY A CONSECUTIVE, SEPARATED REACTION CHAMBER METHOD [J].

KUWANO, Y ;

OHNISHI, M ;

TSUDA, S ;

NAKASHIMA, Y ;

NAKAMURA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (03) :413-417

[7]

MACHONKIN MA, COMMUNICATION

[8]

Mort J., 1986, PLASMA DEPOSITED THI

[9]

OHANLON J, 1980, USERS GUIDE VACUUM T, P126

[10] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON [J].

SPEAR, WE ;

LECOMBER, PG .

SOLID STATE COMMUNICATIONS, 1975, 17 (09) :1193-1196

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