SPRAY DEPOSITION OF TBCL3-DOPED IN2O3 PHOTOLUMINESCENT FILMS

被引：9

作者：

ORTIZ, A ^{[1
]}

GARCIA, M ^{[1
]}

LOPEZ, S ^{[1
]}

FALCONY, C ^{[1
]}

机构：

[1] INST POLITECN NACL,DEPT FIS,CTR INVEST & ESTUDIOS AVANZADOS,MEXICO CITY 07738,DF,MEXICO

来源：

THIN SOLID FILMS | 1988年 / 165卷 / 01期

关键词：

Chemical Reactions--Pyrolysis - Crystals--Structure - Films--Preparation - Photoluminescence;

D O I：

10.1016/0040-6090(88)90696-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Intrinsic and TbCl3-doped indium oxide films have been prepared by spray pyrolysis using air as the carrier gas at atmospheric pressure. Both types of films show a cubic crystalline structure. The photoluminescene spectrum of the intrinsic indium oxide film shows a broad peak centered at about 430 nm. This might be associated with indirect gap transitions. The photoluminescence spectra for the TbCl3-doped indium oxide films show the intrinsic contribution plus the characteristic transition of the Tb3+ ion.

引用

页码：249 / 255

页数：7

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