SINGLE-CRYSTAL SILICON PRESSURE SENSORS WITH 500X OVERPRESSURE PROTECTION

被引:18
作者
CHRISTEL, L
PETERSEN, K
BARTH, P
POURAHMADI, F
MALLON, J
BRYZEK, J
机构
[1] NovaSensor, Fremont, CA 94539
关键词
D O I
10.1016/0924-4247(90)85017-X
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Single-crystal silicon piezoresistive pressure sensors with high overpressure tolerance have been fabricated using the process of silicon fusion bonding. A mechanical stopping surface beneath a conventional diaphragm structure limits diaphragm displacement during overpressure conditions. Uniform and bossed diaphragms in gage and absolute configurations are possible using this process. Sensors with sensitivities as high as 3 mV/ V/psi (typical of sensors used for 5-10 psi full-scale applications) survived overpressures of up to 5000 psi. Finite element modeling is compared to experimental results. © 1990.
引用
收藏
页码:84 / 88
页数:5
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