DEPENDENCE OF ELECTRON-CYCLOTRON RESONANCE PLASMA CHARACTERISTICS ON INTRODUCED MICROWAVE CONDITIONS

被引:4
作者
SAMUKAWA, S [1 ]
NAKAMURA, T [1 ]
ISHITANI, A [1 ]
机构
[1] NEC CORP LTD,MECHATR RES LAB,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 5A期
关键词
ECR PLASMA; MICROWAVE CONDITIONS; KLYSTRON; MAGNETRON;
D O I
10.1143/JJAP.31.L594
中图分类号
O59 [应用物理学];
学科分类号
摘要
This study reveals the strong dependence of electron cyclotron resonance (ECR) plasma generation on the microwave conditions in the ECR plasma. When the introduced microwave frequency oscillates and has a large ripple, the ECR plasma around the ECR position vibrates. As a result, the half-value width of ion energy distributions around the ECR position is extended. Therefore, the microwave conditions cause plasma instability and disturb the ion flight paths to the substrate. The etching characteristics thus are degraded because of the low anisotropy and the deposition. In order to establish a stable discharge around the ECR position, the oscillation and ripple of this introduced microwave frequency must be accurately controlled.
引用
收藏
页码:L594 / L596
页数:3
相关论文
共 8 条
[1]  
FUJIWARA N, 1991, JPN J APPL PHYS, V30, P3143
[2]   LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION METHOD UTILIZING AN ELECTRON-CYCLOTRON RESONANCE PLASMA [J].
MATSUO, S ;
KIUCHI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (04) :L210-L212
[3]   DEPENDENCE OF ELECTRON-CYCLOTRON RESONANCE PLASMA CHARACTERISTICS ON MAGNETIC-FIELD PROFILES [J].
SAMUKAWA, S ;
NAKAMURA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (11B) :3147-3153
[4]   EXTREMELY HIGH-SELECTIVE ELECTRON-CYCLOTRON RESONANCE PLASMA-ETCHING FOR PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON [J].
SAMUKAWA, S ;
SUZUKI, Y ;
SASAKI, M .
APPLIED PHYSICS LETTERS, 1990, 57 (04) :403-405
[5]   ION CURRENT-DENSITY AND ION ENERGY-DISTRIBUTIONS AT THE ELECTRON-CYCLOTRON RESONANCE POSITION IN THE ELECTRON-CYCLOTRON RESONANCE PLASMA [J].
SAMUKAWA, S ;
NAKAGAWA, Y ;
IKEDA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (02) :423-427
[6]   EXTREMELY HIGH SELECTIVE, HIGHLY ANISOTROPIC, AND HIGH-RATE ELECTRON-CYCLOTRON RESONANCE PLASMA-ETCHING FOR N+ POLY-SI AT THE ELECTRON-CYCLOTRON RESONANCE POSITION [J].
SAMUKAWA, S ;
SASAKI, M ;
SUZUKI, Y .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06) :1192-1198
[7]   ION CURRENT-DENSITY AND ITS UNIFORMITY AT THE ELECTRON-CYCLOTRON RESONANCE POSITION IN ELECTRON-CYCLOTRON RESONANCE PLASMA [J].
SAMUKAWA, S ;
MORI, S ;
SASAKI, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (01) :85-90
[8]   MICROWAVE PLASMA ETCHING [J].
SUZUKI, K ;
OKUDAIRA, S ;
SAKUDO, N ;
KANOMATA, I .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (11) :1979-1984