AN EXPERIMENTAL-STUDY ON IMPROVEMENT OF PERFORMANCE FOR HEMISPHERICALLY SHAPED HIGH-POWER IREDS WITH GA1-XALXAS GROWN JUNCTIONS

被引：19

作者：

KURATA, K

ONO, Y

ITO, K

MORI, M

SANO, H

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 04期

关键词：

D O I：

10.1109/T-ED.1981.20349

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：374 / 379

页数：6

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[8] NEAR-INFRARED HIGH-POWER LEDS WITH GA1-XALXAS EPITAXIALLY GROWN JUNCTIONS [J].

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