ENERGY-DISTRIBUTION OF AR IONS AT THE SUBSTRATE IN THE SPUTTERING DEPOSITION OF A-SIH FILMS

A calculation of the energy distribution of Ar ion striking the substrate during the sputtered amorphous silicon thin films deposition is presented. The calculation model is based on the ion-neutral symmetrical collision with charge exchange in the substrate sheath region. The influence of the radio frequency power and gas pressure on the energy distribution is reported, where the results indicate that they alter both the energy and the flux of Ar ions at the substrate.