TIME-RESOLVED PHOTOELECTROCHEMICAL MEASUREMENTS ON SURFACE-MODIFIED N-INP AND P-INP ELECTRODES

被引：12

作者：

COOK, RL

DEMPSEY, PF

SAMMELLS, AF

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 11期

关键词：

D O I：

10.1149/1.2108396

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2287 / 2292

页数：6

共 28 条

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[2] HYDROGEN EVOLUTION AT P-INP PHOTOCATHODES IN ALKALINE ELECTROLYTE [J].

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[4] INP SURFACE-STATES AND REDUCED SURFACE RECOMBINATION VELOCITY [J].

BRILLSON, LJ ;

SHAPIRA, Y ;

HELLER, A .

APPLIED PHYSICS LETTERS, 1983, 43 (02) :174-176

[5] LASER-INDUCED PHOTOELECTROCHEMISTRY ON N-INP AND P-INP ELECTRODES [J].

COOK, RL ;

DEMPSEY, PF ;

SAMMELLS, AF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (09) :1821-1828

[6] INVESTIGATION OF ELECTROREDUCTION KINETICS ON MODIFIED P-INP IN ALKALINE ELECTROLYTE [J].

COOK, RL ;

DEMPSEY, PF ;

SAMMELLS, AF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) :1315-1319

[7] A THEORETICAL-ANALYSIS OF THE RELAXATION OF AN OPEN-CIRCUIT PHOTOPOTENTIAL IN A HIGHLY BIASED N-TYPE SEMICONDUCTOR ELECTRODE .1. NO INTERFACIAL ELECTRON OR HOLE TRANSFER [J].

GOTTESFELD, S ;

FELDBERG, SW .

JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1983, 146 (01) :47-69

[8] CHEMICAL CLEANING OF INP SURFACES - OXIDE COMPOSITION AND ELECTRICAL-PROPERTIES [J].

GUIVARCH, A ;

LHARIDON, H ;

PELOUS, G ;

HOLLINGER, G ;

PERTOSA, P .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :1139-1148

[9] TIME RESOLVED PHOTOCURRENT, PHOTOPOTENTIAL, AND PHOTO-LUMINESCENCE STUDIES OF N-TYPE CDS AND CDSE PHOTO-ELECTRODES [J].

HARZION, Z ;

HUPPERT, D ;

GOTTESFELD, S ;

CROITORU, N .

JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1983, 150 (1-2) :571-581

[10] 11.5-PERCENT SOLAR CONVERSION EFFICIENCY IN THE PHOTOCATHODICALLY PROTECTED P-INP-V3+-V2+-HCL-C SEMICONDUCTOR LIQUID JUNCTION CELL [J].

HELLER, A ;

MILLER, B ;

THIEL, FA .

APPLIED PHYSICS LETTERS, 1981, 38 (04) :282-284

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