PICOSECOND OPTOELECTRONIC MEASUREMENT OF S-PARAMETERS AND OPTICAL-RESPONSE OF AN ALGAAS/GAAS HBT

被引：20

作者：

MATLOUBIAN, M

FETTERMAN, H

KIM, M

OKI, A

CAMOU, J

MOSS, S

SMITH, D

机构：

[1] TRW CO INC,ELECTR SYST GRP,REDONDO BEACH,CA 90278

[2] AEROSPACE CORP,CHEM & PHYS LAB,LOS ANGELES,CA 90009

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1990年 / 38卷 / 05期

关键词：

D O I：

10.1109/22.54944

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The S parameters of an AIGaAs/GaAs heterojunction bipolar transistor (HBT) were measured using a picosecond optoelectronic system. The measured S parameters show qualitatively good agreement with those obtained using a conventional vector network analyzer. The optical response of the HBT was also measured using this system by directly illuminating the base-collector region. Used as a phototransistor, the HBT showed pulse widths with FWHM as short as 15 ps. © 1990 IEEE

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页码：683 / 686

页数：4

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