LINEARITY OF RESPONSE OF ULTRAFAST PHOTOCONDUCTIVE SWITCHES - CRITICAL DEPENDENCE UPON ION-IMPLANTATION AND FABRICATION CONDITIONS

被引:7
作者
MOSS, SC
KNUDSEN, JF
SMITH, DD
机构
关键词
D O I
10.1080/713822330
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
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页码:2007 / 2029
页数:23
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共 35 条
[1]  
Auston D, 1984, PICOSECOND OPTOELECT, P73, DOI DOI 10.1016/B978-0-12-440880-7.50008-0
[2]   PICOSECOND OPTOELECTRONIC DETECTION, SAMPLING, AND CORRELATION-MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS [J].
AUSTON, DH ;
JOHNSON, AM ;
SMITH, PR ;
BEAN, JC .
APPLIED PHYSICS LETTERS, 1980, 37 (04) :371-373
[3]   PICOSECOND OPTICAL ELECTRONIC SAMPLING - CHARACTERIZATION OF HIGH-SPEED PHOTODETECTORS [J].
AUSTON, DH ;
SMITH, PR .
APPLIED PHYSICS LETTERS, 1982, 41 (07) :599-601
[4]   PICOSECOND OPTOELECTRONIC SWITCHING AND GATING IN SILICON [J].
AUSTON, DH .
APPLIED PHYSICS LETTERS, 1975, 26 (03) :101-103
[5]   PICOSECOND PROCESSES OF LASER-EXCITED CARRIERS IN SILICON ON SAPPHIRE [J].
BERGNER, H ;
BRUCKNER, V ;
KERSTAN, F ;
NOWICK, W .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1985, 128 (02) :769-777
[6]   SIMULTANEOUS MEASUREMENT OF THE 2-PHOTON COEFFICIENT AND FREE-CARRIER CROSS-SECTION ABOVE THE BANDGAP OF CRYSTALLINE SILICON [J].
BOGGESS, TF ;
BOHNERT, KM ;
MANSOUR, K ;
MOSS, SC ;
BOYD, IW ;
SMIRL, AL .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (02) :360-368
[7]   FAST RESPONSE-TIME MEASUREMENTS IN TRANSISTORS USING PICOSECOND OPTOELECTRONIC SWITCHES [J].
BRUCKNER, V ;
KERSTAN, F .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 91 (02) :K179-K183
[8]   PICOSECOND OPTOELECTRONIC MEASUREMENT OF THE HIGH-FREQUENCY SCATTERING PARAMETERS OF A GaAs FET. [J].
Cooper, Donald E. ;
Moss, Steven C. .
IEEE Journal of Quantum Electronics, 1986, QE-22 (01) :94-100
[9]  
COOPER DE, 1986, ULTRAFAST PHENOMENA, V5, P117
[10]  
DOANY FE, 1987, PICOSECOND ELECT OPT, V2, P228