LINEARITY OF RESPONSE OF ULTRAFAST PHOTOCONDUCTIVE SWITCHES - CRITICAL DEPENDENCE UPON ION-IMPLANTATION AND FABRICATION CONDITIONS

被引:7
作者
MOSS, SC
KNUDSEN, JF
SMITH, DD
机构
关键词
D O I
10.1080/713822330
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
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页码:2007 / 2029
页数:23
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共 35 条
[11]   PHOTOCONDUCTIVITY AND PHOTOVOLTAGE IN A SEMICONDUCTOR IN THE RELAXATION CASE [J].
DROZHOV, YP .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 101 (01) :205-216
[12]  
Edwards D. F., 1985, HDB OPTICAL CONSTANT, P547
[13]   ION-BEAM-INDUCED CRYSTALLIZATION AND AMORPHIZATION OF SILICON [J].
ELLIMAN, RG ;
WILLIAMS, JS ;
BROWN, WL ;
LEIBERICH, A ;
MAHER, DM ;
KNOELL, RV .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :435-442
[14]   PRACTICAL COMPARISON OF OPTOELECTRONIC SAMPLING SYSTEMS AND DEVICES [J].
EVERARD, JKA ;
CARROLL, JE .
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1983, 130 (01) :5-16
[15]   THEORETICAL CONSIDERATIONS ON LATERAL SPREAD OF IMPLANTED IONS [J].
FURUKAWA, S ;
ISHIWARA, H ;
MATSUMURA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (02) :134-+
[16]  
GOLECKI I, 1984, P S COMP THIN FILM T
[17]   PICOSECOND PHOTOCONDUCTIVITY MEASUREMENTS OF MOBILITY AND LIFETIME IN SILICON-ON-SAPPHIRE FILMS [J].
GRIVITSKAS, V ;
WILLANDER, M ;
TELLEFSEN, JA .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :3169-3172
[18]  
HAMMOND RB, APPL PHYS LETT, V45, P289
[19]  
KNUDSEN JF, 1988, P S ADV SURFACE PROC, V126
[20]   FUNDAMENTALS OF PULSED LASER ANNEALING [J].
KURZ, H .
FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS, 1983, 23 :115-140