MICROINHOMOGENEITIES IN MELT AND VAPOR GROWN SILICON

[1] Chalmers B., 1964, PRINCIPLES SOLIDIFIC

[2] CONTAMINANTS ON CHEMICALLY ETCHED SILICON SURFACES - LEED-AUGER METHOD [J]. SURFACE SCIENCE, 1970, 23 (02) : 283 - &

[3] EPITAXIAL GROWTH OF SILICON BY HYDROGEN REDUCTION OF SIHCL3 ONTO SILICON SUBSTRATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (10) : 957 - 962

[4] KAO YC, 1970, 137 NAT M ELECTR SOC

[5] KERN W, 1970, RCA REV, V31, P187

[6] VACANCY CLUSTERS IN DISLOCATION-FREE SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (03) : 100 - &

[7] KODERA H, 1963, JPN J APPL PHYS, V2, P527

[8] A SPREADING RESISTANCE TECHNIQUE FOR RESISTIVITY MEASUREMENTS ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) : 255 - &

[9] MURRAY LA, 1967, ELECTROCHEM TECHNOL, V5, P406

[10] Rai-Choudhury P., 1970, Journal of Crystal Growth, V7, P361, DOI 10.1016/0022-0248(70)90064-3

[1] Chalmers B., 1964, PRINCIPLES SOLIDIFIC

[2] CONTAMINANTS ON CHEMICALLY ETCHED SILICON SURFACES - LEED-AUGER METHOD [J]. SURFACE SCIENCE, 1970, 23 (02) : 283 - &

[3] EPITAXIAL GROWTH OF SILICON BY HYDROGEN REDUCTION OF SIHCL3 ONTO SILICON SUBSTRATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (10) : 957 - 962

[4] KAO YC, 1970, 137 NAT M ELECTR SOC

[5] KERN W, 1970, RCA REV, V31, P187

[6] VACANCY CLUSTERS IN DISLOCATION-FREE SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (03) : 100 - &

[7] KODERA H, 1963, JPN J APPL PHYS, V2, P527

[8] A SPREADING RESISTANCE TECHNIQUE FOR RESISTIVITY MEASUREMENTS ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) : 255 - &

[9] MURRAY LA, 1967, ELECTROCHEM TECHNOL, V5, P406

[10] Rai-Choudhury P., 1970, Journal of Crystal Growth, V7, P361, DOI 10.1016/0022-0248(70)90064-3