LOW-THRESHOLD STRIPE GEOMETRY LASERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION (MO-CVD)

被引：9

作者：

BURNHAM, RD

SCIFRES, DR

STREIFER, W

机构：

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 19期

关键词：

D O I：

10.1049/el:19810501

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：714 / 715

页数：2

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[1] BOULEY JC, 1978, APPL PHYS LETT, V33, P325
[2] VERY LOW THRESHOLD GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METAL ORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 473 - 475
[3] DUPUIS RD, 1979, I PHYS C SER, V45, P1
[4] LOW-THRESHOLD-CURRENT CW INJECTION-LASERS
ETTENBERG, M
LOCKWOOD, HF
[J]. FIBER AND INTEGRATED OPTICS, 1979, 2 (01) : 47 - 61
[5] SHORT CAVITY SEMICONDUCTOR-LASER
MATSUMOTO, N
ANDO, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (09) : 1697 - 1698
[6] LOW THRESHOLD CURRENT PROTON-ISOLATED (GAAL)AS DOUBLE HETEROSTRUCTURE LASERS
STEVENTON, AG
FIDDYMENT, PJ
NEWMAN, DH
[J]. OPTICAL AND QUANTUM ELECTRONICS, 1977, 9 (06) : 519 - 525
[7] GROWTH OF HIGH-QUALITY ALXGAL-XAS BY OMVPE FOR LASER DEVICES
WAGNER, EE
HOM, G
STRINGFELLOW, GB
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) : 239 - 253
[8] OHMIC CONTACTS TO NORMAL-GAAS USING LOW-TEMPERATURE ANNEAL
WERTHEN, JG
SCIFRES, DR
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 1127 - 1129