SELF-ANNEALING OF ION-IMPLANTED SILICON - 1ST EXPERIMENTAL RESULTS

被引：42

作者：

CEMBALI, GF ^{[1
]}

MERLI, PG ^{[1
]}

ZIGNANI, F ^{[1
]}

机构：

[1] UNIV BOLOGNA,FAC KLIN ENDOKRINOL,IST CHIM,I-40126 BOLOGNA,ITALY

来源：

关键词：

D O I：

10.1063/1.92139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：808 / 810

页数：3

共 7 条

[1] ION-BEAM ANNEALING OF SEMICONDUCTORS [J].

HODGSON, RT ;

BAGLIN, JEE ;

PAL, R ;

NERI, JM ;

HAMMER, DA .

[2]

MADDEN PK, 1972, RADIAT EFF, V14, P271

[3]

MASETTI G, 1979, SOLID STATE ELECTRON, V3, P65

[4]

MAYER JM, 1978, P LASER EFFECTS ION

[5] CHARACTERIZATION OF MULTIPLE-SCAN ELECTRON-BEAM ANNEALING METHOD [J].

MCMAHON, RA ;

AHMED, H ;

DOBSON, RM ;

SPEIGHT, JD .

MERLI, PG ;

ZIGNANI, F .

RADIATION EFFECTS LETTERS, 1980, 50 (3-6) :115-118

[7]

MERLI PG, 1980, OPTIK, V56, P205