INCORPORATION MECHANISM OF N, AL, AND B IMPURITIES IN CHEMICAL-VAPOR-DEPOSITION OF SIC

被引：76

作者：

KIMOTO, T

ITOH, A

MATSUNAMI, H

机构：

[1] Department of Electrical Engineering, Faculty of Engineering, Kyoto University, Sakyo

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 16期

关键词：

D O I：

10.1063/1.114555

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In situ doping characteristics of N, Al, and B in step-controlled epitaxy of SIC have been investigated. Clear C/Si ratio dependence was observed in the growth on (0001)Si faces. Doping efficiency of N decreased and those of Al and B increased under the C-rich condition, which agrees with a model proposed as ''site-competition epitaxy.'' However, doping efficiencies were almost independent of the C/Si ratio on (000 (1) over bar)C faces. Based on the results, the incorporation mechanism is discussed. (C) 1995 American Institute of Physics.

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页码：2385 / 2387

页数：3

相关论文

共 15 条

[1] A MODEL OF SILICON-CARBIDE CHEMICAL VAPOR-DEPOSITION [J].

ALLENDORF, MD ;

KEE, RJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (03) :841-852

[2] SITE EFFECT ON THE IMPURITY LEVELS IN H-4, 6H, AND 15R SIC [J].

IKEDA, M ;

MATSUNAMI, H ;

TANAKA, T .

PHYSICAL REVIEW B, 1980, 22 (06) :2842-2854

[3] HIGH-QUALITY 4H-SIC HOMOEPITAXIAL LAYERS GROWN BY STEP-CONTROLLED EPITAXY [J].

ITOH, A ;

AKITA, H ;

KIMOTO, T ;

MATSUNAMI, H .

APPLIED PHYSICS LETTERS, 1994, 65 (11) :1400-1402

[4] CHEMICAL VAPOR-DEPOSITION AND CHARACTERIZATION OF UNDOPED AND NITROGEN-DOPED SINGLE CRYSTALLINE 6H-SIC [J].

KARMANN, S ;

SUTTROP, W ;

SCHONER, A ;

SCHADT, M ;

HABERSTROH, C ;

ENGELBRECHT, F ;

HELBIG, R ;

PENSL, G ;

STEIN, RA ;

LEIBENZEDER, S .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (11) :5437-5442

[5] STEP BUNCHING IN CHEMICAL-VAPOR-DEPOSITION OF 6H-SIC AND 4H-SIC ON VICINAL SIC(0001) FACES [J].

KIMOTO, T ;

ITOH, A ;

MATSUNAMI, H .

APPLIED PHYSICS LETTERS, 1995, 66 (26) :3645-3647

[6] SURFACE KINETICS OF ADATOMS IN VAPOR-PHASE EPITAXIAL-GROWTH OF SIC ON 6H-SIC(0001) VICINAL SURFACES [J].

KIMOTO, T ;

MATSUNAMI, H .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (02) :850-859

[7] CHEMICAL VAPOR-DEPOSITION AND CHARACTERIZATION OF 6H-SIC THIN-FILMS ON OFF-AXIS 6H-SIC SUBSTRATES [J].

KONG, HS ;

GLASS, JT ;

DAVIS, RF .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (05) :2672-2679

[8]

KORDINA O, 1994, MATER RES SOC SYMP P, V339, P405, DOI 10.1557/PROC-339-405

[9]

Kuroda N., 1987, 19 C SOL STAT DEV MA, P227

[10]

Larkin D J, 1994, SILICON CARBIDE RELA, P51