GUNN OSCILLATIONS IN THIN GAAS EPILAYERS AND MESFETS

被引：4

作者：

TSIRONIS, C ^{[1
]}

DEKKERS, JJM ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN, INST SEMICONDUCTOR ELECTR, D-5100 AACHEN, FED REP GER

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1980年 / 127卷 / 05期

关键词：

Compendex;

D O I：

10.1049/ip-i-1.1980.0049

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

OSCILLATORS, GUNN

引用

页码：241 / 249

页数：9

共 16 条

[1]

BENEKING H, 1975, P ESSDERC, P236

[2]

ENGELMANN REM, 1976, P IEDM WASHINGTON, P351

[3] GAAS POWER MESFETS WITH A GRADED RECESS STRUCTURE [J].

FURUTSUKA, T ;

HIGASHISAKA, A ;

AONO, Y ;

TAKAYAMA, Y ;

HASEGAWA, F .

ELECTRONICS LETTERS, 1979, 15 (14) :417-418

[4] NOISE TEMPERATURE IN GAAS EPI-LAYER FOR FETS [J].

GRAFFEUIL, J ;

SAUTEREAU, JF ;

BLASQUEZ, G ;

ROSSEL, P .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) :596-599

[5] SPONTANEOUS OSCILLATIONS IN GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS [J].

GRUBIN, HL ;

FERRY, DK ;

GLEASON, KR .

SOLID-STATE ELECTRONICS, 1980, 23 (02) :157-172

[6]

IMMORLICA AA, 1978, P IEDM WASHINGTON, P368

[7] NEW GRAPHITE BOAT CONSTRUCTION FOR LPE GROWTH OF THIN GAAS LAYERS WITH A NEW TECHNIQUE [J].

KAUFMANN, LMF ;

HEIME, K .

JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) :321-327

[8]

KOHN E, 1978, ELECTRON LETT, V14, P786, DOI 10.1049/el:19780531

[9]

PACHA VF, 1978, AEU-INT J ELECTRON C, V32, P235

[10]

TANIMOTO M, 1976, P ESSDERC MUNICH, P84

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