ANALYSIS OF GAMMA-RADIATION INDUCED INSTABILITY MECHANISMS IN CMOS TRANSISTORS

被引：40

作者：

DIMITRIJEV, S

GOLUBOVIC, S

ZUPAC, D

PEJOVIC, M

STOJADINOVIC, N

机构：

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 05期

关键词：

D O I：

10.1016/0038-1101(89)90122-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：349 / 353

页数：5

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